GAIN SUPPRESSION IN SEMICONDUCTOR-LASERS - THE INFLUENCE OF DYNAMIC CARRIER TEMPERATURE-CHANGES

An analytic expression for the gain suppression coefficient of semiconductor laser in terms of carrier temperature and other material parameters is presented. The expression is derived from a density matrix formulation of gain in diode lasers based on a dynamic carrier heating model. We find that in the single mode approximation the theoretical estimate of the gain suppression coefficient is of the order 10−23 m3 in agreement with experimental values. This supports recent direct experimental demonstrations that dynamic carrier heating, rather than spectral hole burning provides the dominant contribution to nonlinear gain in semiconductor lasers.

[1]  M. Yamada,et al.  A condition of single longitudinal mode operation in injection lasers with index-guiding structure , 1979, IEEE Journal of Quantum Electronics.

[2]  Robert Karplus,et al.  A Note on Saturation in Microwave Spectroscopy , 1948 .

[3]  Govind P. Agrawal,et al.  Gain nonlinearities in semiconductor lasers: Theory and application to distributed feedback lasers , 1987 .

[4]  Rodney S. Tucker,et al.  High-speed modulation of semiconductor lasers , 1985 .

[5]  Kin Seng Chiang,et al.  Construction of refractive-index profiles of planar dielectric waveguides from the distribution of effective indexes , 1985 .

[6]  Charles Howard Henry,et al.  Longitudinal mode self‐stabilization in semiconductor lasers , 1982 .

[7]  J. Shah.  Hot electrons and phonons under high intensity photoexcitation of semiconductors , 1978 .

[8]  M. Adams,et al.  Influence of spectral hole-burning on quaternary laser transients , 1983 .

[9]  High-frequency modulation of 1.52 μm vapour-phase-transported InGaAsP lasers , 1985 .

[10]  Minoru Yamada,et al.  Analysis of gain suppression in undoped injection lasers , 1981 .

[11]  Erich P. Ippen,et al.  Observations of subpicosecond dynamics in GaAlAs laser diodes , 1986 .

[12]  K Furuya,et al.  Reduction of resonancelike peak in direct modulation due to carrier diffusion in injection laser. , 1978, Applied optics.

[13]  Erich P. Ippen,et al.  Subpicosecond gain dynamics in GaAlAs laser diodes , 1987 .

[14]  Masahiro Asada,et al.  Density-matrix theory of semiconductor lasers with relaxation broadening model-gain and gain-suppression in semiconductor lasers , 1985 .

[15]  Ivan P. Kaminow,et al.  High-frequency characteristics of directly modulated InGaAsP ridge waveguide and buried heterostructure lasers , 1984 .