GROWTH, CHARACTERIZATION AND THE LIMITS OF ULTRATHIN SiO,-BASED DIELECTRICS FOR FUTURE CMOS APPLICATIONS

Watson Research Center P.O. Box 218, Yorktown Heights, NY 10598 With the push for faster and more dense CMOS processors, device scaling has progressed to the point where the needs of technology are now beyond our understanding of either the fabrication of ultra-thin dielectrics or their basic electronic properties. For technologies beyond the 0.1