论文信息 - Characterization and model of 4-terminal RF CMOS with bulk effect

Characterization and model of 4-terminal RF CMOS with bulk effect

Special test structures using separated source and bulk contacts with the 3/sup rd/ GSG probe for the substrate bias are described. These test structures allow characterizing 4-terminal MOSFETs with a standard two-port Network Analyzer. The high-frequency behavior of bulk effect in MOSFETs is studied at different bias conditions for a 0.18 /spl mu/m RF CMOS technology. Measurement result of RF NMOSFET shows that a good accuracy of the 4-terminal RF MOSFET modeling is achieved. The validity and accuracy of our approach is verified and analyzed from two-port Y-parameter results.

[1] Heng-Ming Hsu,et al. A 0.18 /spl mu/m foundry RF CMOS technology with 70 GHz F/sub t/ for single chip system solutions , 2001, 2001 IEEE MTT-S International Microwave Sympsoium Digest (Cat. No.01CH37157).

[2] Mansun Chan,et al. A physical and scalable I-V model in BSIM3v3 for analog/digital circuit simulation , 1997 .

[3] Seonghearn Lee,et al. A semianalytical parameter extraction of a SPICE BSIM3v3 for RF MOSFET's using S-parameters , 2000 .

[4] Yuhua Cheng,et al. High-frequency small signal AC and noise modeling of MOSFETs for RF IC design , 2002 .

[5] William Liu,et al. MOSFET Models for SPICE Simulation: Including BSIM3v3 and BSIM4 , 2001 .

[6] R. Gharpurey,et al. RF MOSFET modeling accounting for distributed substrate and channel resistances with emphasis on the BSIM3v3 SPICE model , 1997, International Electron Devices Meeting. IEDM Technical Digest.

[7] S. Narendra,et al. Modeling of parasitic capacitances in deep submicrometer conventional and high-K dielectric MOS transistors , 2003 .

[8] Christian Enz,et al. An MOS transistor model for RF IC design valid in all regions of operation , 2002 .

[9] Didier Belot,et al. A Bluetooth radio in 0.18 μm CMOS , 2002 .

[10] T.J. Yeh,et al. Broadband small-signal model and parameter extraction for deep sub-micron MOSFETs valid up to 110 GHz , 2003, IEEE Radio Frequency Integrated Circuits (RFIC) Symposium, 2003.