论文信息 - Modeling and separate extraction of bias-dependent and bias-independent S/D resistances in MOSFETs

Modeling and separate extraction of bias-dependent and bias-independent S/D resistances in MOSFETs

S/D resistance extraction is important in technology development to help extraction of channel carrier mobility and pinpoint the bottleneck of MOSFET performance. In this paper, a new method is proposed for accurate extraction of bias-dependent and bias-independent S/D resistances of advanced MOSFETs. This method is carried on an n-MOSFET with W/L=9um/60nm, and the results fit the experimental data accurately.

Zuochang Ye | Yan Wang | Zebang Guo | Xiaojian Li

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