InGaAlP visible light laser diodes and light-emitting diodes

Abstract In this paper, we review and discuss the critical problems involved in the research and development of InGaAlP visible light devices along with some of our achievements. High p-doping of a cladding layer, and a multi-quantum-barrier structure improved the temperature characteristics of InGaAlP laser diodes. These techniques have made it possible to realize a high temperature CW operation above 70°C at the wavelength of 633 nm. New structure InGaAlP light-emitting diodes (LEDs) which employ an off-angle substrate and a Bragg reflector have improved both quantum efficiency and light extraction efficiency. Candera-class, high-brightness LEDs have been achieved for operation in the orange to green color region.

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