STT-MRAM에 대한 빠른 동작과 높은 민감도를 갖는 전류 방식의 감지 증폭기

In this paper, we proposed a novel sense amplifier for the Spin Torque Transfer Magneto-resistive Random Access Memory (STT-MRAM) to improve the reading speed and to be capable of stable sensing even under low Tunnel Magneto-Resistance (TMR) ratio and low current difference. The proposed sense amplifier is able to get the fast response time and to be a stable sensing by amplified the difference of reading currents flowing through the MTJ by using current mirror. As a simulation results, proposed sense amplifier is faster than conventional sense amplifier about 1.2㎱.