Optical and photoelectrical characterization of as-deposited and annealed PECVD polysilicon thin films

Raman and optical spectroscopy, conductivity and steady-state photoconductivity measurements, spectroscopic ellipsometry and atomic force microscopy (AFM) techniques were used to determine the properties of microcrystalline (μc-Si:H) and amorphous (a-Si:H) hydrogenated silicon films deposited at low temperatures by a conventional plasma-enhanced chemical vapour deposition (PECVD) reactors from silane-hydrogen mixtures. In order to gain insight into the mechanisms of transport and recombination in μc-Si:H films we study effect of isochronal annealing at 300-600° C on their properties.

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