Recovery of threshold voltage after hot-carrier stressing

The recovery of threshold voltage due to high drain or gate voltage and the effects of hot-carrier stressing on the drain breakdown voltage of MOSFETs have been studied. A high oxide field causes slow recovery through tunneling detrapping of electrons in both p- and n-MOSFETs. For n-MOSFETs the mechanism of fast recovery is low-level hole injection at high V/sub D/. Hot-carrier stressing at high V/sub G/ causes the drain breakdown voltage to decrease (walk-in). This results in enhanced hold injection, thus increasing the rate of subsequent recovery of V/sub t/. The breakdown voltage increases and then decreases when stressed at low gate voltages. >

[1]  R. Gurtler.  Avalanche drift instability in planar passivated p-n junctions , 1968 .

[2]  J. F. Verwey,et al.  Drift of the breakdown voltage in p-n junctions in silicon (walk-out) , 1977 .

[3]  J. Moll,et al.  Field induced reemission of electrons trapped in SiO2 , 1979, IEEE Transactions on Electron Devices.

[4]  G. Taylor,et al.  Instability of MOSFET's due to redistribution of Oxide charges , 1982, IEEE Transactions on Electron Devices.

[5]  G. Dorda,et al.  Generation of interface states by hot hole injection in MOSFET's , 1982, IEEE Transactions on Electron Devices.

[6]  E. Takeda,et al.  An empirical model for device degradation due to hot-carrier injection , 1983, IEEE Electron Device Letters.

[7]  F. Hsu,et al.  Relationship between MOSFET degradation and hot-electron-induced interface-state generation , 1984, IEEE Electron Device Letters.

[8]  F. Hsu,et al.  Structure-enhanced MOSFET degradation due to hot-electron injection , 1984, IEEE Electron Device Letters.

[9]  Stephen Aplin Lyon,et al.  Capture and tunnel emission of electrons by deep levels in ultrathin nitrided oxides on silicon , 1984 .

[10]  F. Hsu,et al.  Evaluation of LDD MOSFET's based on hot-electron-induced degradation , 1984, IEEE Electron Device Letters.

[11]  Hot-electron aging in p-channel MOSFET's for VLSI CMOS , 1984, IEEE Transactions on Electron Devices.

[12]  T. Tsuchiya,et al.  Relationship between hot-electrons/Holes and degradation of p- and n-channel MOSFET's , 1985, IEEE Electron Device Letters.

[13]  Chenming Hu,et al.  Hot-electron-induced MOSFET degradation—Model, monitor, and improvement , 1985, IEEE Transactions on Electron Devices.

[14]  Fu-Chieh Hsu,et al.  Hot-electron degradation in submicron VLSI , 1985, 1985 International Electron Devices Meeting.

[15]  C. Werner,et al.  Hot-electron and hole-emission effects in short n-channel MOSFET's , 1985, IEEE Transactions on Electron Devices.

[16]  D. Scott,et al.  Reliability effects on MOS transistors due to hot-carrier injection , 1985 .

[17]  Y. Nissan-Cohen,et al.  A novel floating-gate method for measurement of ultra-low hole and electron gate currents in MOS transistors , 1986, IEEE Electron Device Letters.

[18]  S. Nakajima,et al.  Hot-carrier-injected oxide region and hot-electron trapping as the main cause in Si nMOSFET degradation , 1987, IEEE Transactions on Electron Devices.

[19]  T.Y. Chan,et al.  The impact of gate-induced drain leakage current on MOSFET scaling , 1987, 1987 International Electron Devices Meeting.