Full extraction of PHEMT state functions using time domain measurements

The large signal state functions of the PHEMT, (Pseudomorphic High Electron Mobility Transistor) are fully extracted for the first time using dynamic measurements only. A novel reverse waveform measurement technique combined with forward waveform measurements yield the intrinsic current and charge surfaces, state functions. The new reverse extraction results have been verified to be bias and power level independent and the resultant state functions obtained are confirmed to be unique. The technique provides a direct high frequency curve-tracing tool, and allows for the generation of the parameter surfaces required for dynamic table-based models.

[1]  M. Fernandez-Barciela,et al.  Direct extraction of nonlinear FET I-V functions from time domain large signal measurements , 1998 .

[2]  Paul J. Tasker,et al.  High power time domain measurement system with active harmonic load-pull for high efficiency base station amplifier design , 2000, IMS 2000.

[3]  M. Fernandez-Barciela,et al.  Direct extraction of nonlinear FET Q-V functions from time domain large signal measurements , 2000 .

[4]  D. E. Root,et al.  Experimental evaluation of large-signal modeling assumptions based on vector analysis of bias-dependent S-parameter data from MESFETs and HEMTs , 1992, 1992 IEEE Microwave Symposium Digest MTT-S.

[5]  P. J. Tasker,et al.  Bias dependence of the MODFET intrinsic model elements values at microwave frequencies , 1989 .

[6]  P.M. White,et al.  Improved equivalent circuit for determination of MESFET and HEMT parasitic capacitances from "Coldfet" measurements , 1993, IEEE Microwave and Guided Wave Letters.

[7]  M. Carmen Curras Francos.  Microwave fet large signal modeling and experimental characterization using a vector nonlinear network analyzer , 2000 .

[8]  M Demmler,et al.  Direct extraction of non-linear intrinsic transistor behaviour from large signal waveform measurement data , 1996, 1996 26th European Microwave Conference.

[9]  T. Zimmer,et al.  Kink effect in HEMT structures: A trap-related semi-quantitative model and an empirical approach for spice simulation , 1992 .

[10]  P. J. Tasker,et al.  A Vector Corrected High Power On-Wafer Measurement System with a Frequency Range for the Higher Harmomcs up to 40 GHz , 1994, 1994 24th European Microwave Conference.

[11]  Dominique Schreurs.  Table-based large-signal models based on large-signal measurements , 1996 .

[12]  Ulrich L. Rohde,et al.  A new and reliable direct parasitic extraction method for MESFETs and HEMTs , 1993, 1993 23rd European Microwave Conference.