Effect of Al incorporation in nonpolar m‐plane GaN/AlGaN multi‐quantum‐wells using plasma‐assisted molecular‐beam epitaxy
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E. Monroy | C. Bougerol | E. Bellet-Amalric | C. Lim | J. Schörmann | A. Ajay | M. Beeler
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E. Monroy | C. Bougerol | E. Bellet-Amalric | C. Lim | J. Schörmann | A. Ajay | M. Beeler