Multi-angle VECSEL cavities for dispersion control and multi-color operation

We present a novel Vertical External Cavity Surface Emitting Laser (VECSEL) cavity design which makes use of multiple interactions with the gain region under different angles of incidence in a single round trip. This design allows for optimization of the net, round-trip Group Delay Dispersion (GDD) by shifting the GDD of the gain via cavity fold angle while still maintaining the high gain of resonant structures. The effectiveness of this scheme is demonstrated with femtosecond-regime pulses from a resonant structure and record pulse energies for the VECSEL gain medium. In addition, we show that the interference pattern of the intracavity mode within the active region, resulting from the double-angle multifold, is advantageous for operating the laser in CW on multiple wavelengths simultaneously. Power, noise, and mode competition characterization is presented.

[1]  M. Koch,et al.  Time-dynamics of the two-color emission from vertical-external-cavity surface-emitting lasers , 2012 .

[2]  M. Koch,et al.  Temporal dynamics of the two-color emission in vertical-external-cavity surface-emitting lasers , 2012, 2012 Conference on Lasers and Electro-Optics (CLEO).

[3]  Stephan W Koch,et al.  Passively modelocked VECSEL emitting 682 fs pulses with 5.1W of average output power , 2012 .

[4]  Jorg Hader,et al.  On the measurement of the thermal impedance in vertical-external-cavity surface-emitting lasers , 2013 .

[5]  V. Wittwer,et al.  Low repetition rate SESAM modelocked VECSEL using an extendable active multipass-cavity approach. , 2012, Optics express.

[6]  Jorg Hader,et al.  15 W Single Frequency Optically Pumped Semiconductor Laser With Sub-Megahertz Linewidth , 2014, IEEE Photonics Technology Letters.

[7]  Jorg Hader,et al.  Fully microscopic modeling of mode locking in microcavity lasers , 2016 .

[8]  M. Weyers,et al.  Pulse repetition rate up to 92 GHz or pulse duration shorter than 110 fs from a mode-locked semiconductor disk laser , 2011 .

[9]  Jorg Hader,et al.  Quantum design strategy pushes high‐power vertical‐external‐cavity surface‐emitting lasers beyond 100 W , 2012 .

[10]  E. Viktorov,et al.  85.7 MHz repetition rate mode-locked semiconductor disk laser: fundamental and soliton bound states. , 2013, Optics express.

[11]  H. Beere,et al.  4.35 kW peak power femtosecond pulse mode-locked VECSEL for supercontinuum generation. , 2013, Optics Express.

[12]  M. Weyers,et al.  Blue 489-nm picosecond pulses generated by intracavity frequency doubling in a passively mode-locked optically pumped semiconductor disk laser , 2005 .

[13]  Jorg Hader,et al.  Colliding pulse mode locking of vertical-external-cavity surface-emitting laser , 2016 .

[14]  Stephan W Koch,et al.  Non-equilibrium analysis of the two-color operation in semiconductor quantum-well lasers , 2011 .

[15]  S. Koch,et al.  Dual-Wavelength Passively Mode-Locked Semiconductor Disk Laser , 2016, IEEE Photonics Technology Letters.

[16]  M. Dawson,et al.  Tunable ultraviolet output from an intracavity frequency-doubled red vertical-external-cavity surface-emitting laser , 2006 .

[17]  S. Koch,et al.  Grating-based wavelength control of single- and two-color vertical-external-cavity-surface-emitting lasers. , 2012, Optics letters.

[18]  Fan Zhang,et al.  Dual-Wavelength Emission From a Serially Connected Two-Chip VECSEL , 2016, IEEE Photonics Technology Letters.

[19]  Dominik Waldburger,et al.  High-power 100 fs semiconductor disk lasers , 2016 .

[20]  K. Kohler,et al.  Recent Advances in 2-μm GaSb-Based Semiconductor Disk Laser—Power Scaling, Narrow-Linewidth and Short-Pulse Operation , 2013, IEEE Journal of Selected Topics in Quantum Electronics.