RF-to-DC Characteristics of Direct Irradiated On-Chip Gallium Arsenide Schottky Diode and Antenna for Application in Proximity Communication System

We report the RF-to-DC characteristics of the integrated AlGaAs/GaAs Schottky diode and antenna under the direct injection and irradiation condition. The conversion efficiency up to 80% under direct injection of 1 GHz signal to the diode was achieved. It was found that the reduction of series resistance and parallel connection of diode and load tend to lead to the improvement of RF-to-DC conversion efficiency. Under direct irradiation from antenna-to-antenna method, the output voltage of 35 mV was still obtainable for the distance of 8 cm between both antennas in spite of large mismatch in the resonant frequency between the diode and the connected antenna. Higher output voltage in volt range is expected to be achievable for the well-matching condition. The proposed on-chip AlGaAs/GaAs HEMT Schottky diode and antenna seems to be a promising candidate to be used for application in proximity communication system as a wireless low power source as well as a highly sensitive RF detector.

[1]  Abdul Manaf Hashim,et al.  Open-Gated pH Sensor Fabricated on an Undoped-AlGaN/GaN HEMT Structure , 2011, Sensors.

[2]  Muhammad Azrin Ahmad,et al.  Fabrication and characterization of ZnO nanostructures on Si (111) substrate using a thin ALN buffer layer , 2013 .

[3]  Hadis Morkoç,et al.  High-κ dielectrics and advanced channel concepts for Si MOSFET , 2008 .

[4]  T. Watanabe,et al.  Integration of optical devices based on Si, Ge and SiOx , 2010, 7th IEEE International Conference on Group IV Photonics.

[5]  Klaus Finkenzeller,et al.  Book Reviews: RFID Handbook: Fundamentals and Applications in Contactless Smart Cards and Identification, 2nd ed. , 2004, ACM Queue.

[6]  R. Pillarisetty,et al.  Academic and industry research progress in germanium nanodevices , 2011, Nature.

[7]  Jian Wang,et al.  Ge-Photodetectors for Si-Based Optoelectronic Integration , 2011, Sensors.

[8]  C. Luo,et al.  Design of Circular Polarization Antenna With Harmonic Suppression for Rectenna Application , 2012, IEEE Antennas and Wireless Propagation Letters.

[9]  N. Behdad,et al.  Bandwidth enhancement and further size reduction of a class of miniaturized slot antennas , 2004, IEEE Transactions on Antennas and Propagation.

[10]  A. Gharsallah,et al.  A Dual Circularly Polarized 2.45-GHz Rectenna for Wireless Power Transmission , 2011, IEEE Antennas and Wireless Propagation Letters.

[11]  Kai Chang,et al.  5.8-GHz circularly polarized dual-diode rectenna and rectenna array for microwave power transmission , 2006, IEEE Transactions on Microwave Theory and Techniques.

[12]  Kai Chang,et al.  Compact 5.8-GHz Rectenna Using Stepped-Impedance Dipole Antenna , 2007, IEEE Antennas and Wireless Propagation Letters.

[13]  Kai Ma,et al.  MOSFETs and high-speed photodetectors on Ge-on-insulator substrates fabricated using rapid melt growth , 2004, IEDM Technical Digest. IEEE International Electron Devices Meeting, 2004..

[14]  Yoon-Ha Jeong,et al.  A Study of Strain Engineering Using CESL Stressor on Reliability Comparing Effect of Intrinsic Mechanical Stress , 2009, IEEE Electron Device Letters.

[15]  T. Tezuka,et al.  Control of threshold-voltage and short-channel effects in ultrathin strained-SOI CMOS devices , 2005, IEEE Transactions on Electron Devices.

[16]  Kai Chang,et al.  Design and Experiments of a High-Conversion-Efficiency , 1998 .

[17]  Kai Chang,et al.  A high-efficiency dual-frequency rectenna for 2.45- and 5.8-GHz wireless power transmission , 2002 .

[18]  R. Urata,et al.  Low-temperature growth of GaAs on Si used for ultrafast photoconductive switches , 2004, IEEE Journal of Quantum Electronics.

[19]  O. P. Pchelyakov,et al.  III-V Compounds-on-Si: Heterostructure Fabrication, Application and Prospects , 2009 .

[20]  Abdul Manaf Hashim,et al.  Dual-Functional On-Chip AlGaAs/GaAs Schottky Diode for RF Power Detection and Low-Power Rectenna Applications , 2011, Sensors.

[21]  Cor L. Claeys,et al.  Germanium-based technologies : from materials to devices , 2007 .

[22]  Norfarariyanti Parimon,et al.  Design, fabrication and characterization of a Schottky diode on an AlGaAs/GaAs HEMT structure for on-chip RF power detection , 2010 .

[23]  H. Henisch.  Metal-semiconductor Schottky barrier junctions and their applications , 1986, Proceedings of the IEEE.

[24]  Yvonne Schuhmacher,et al.  Rfid Handbook Fundamentals And Applications In Contactless Smart Cards And Identification , 2016 .

[25]  A. Asenov,et al.  Ballistic transport in Si, Ge, and GaAs nanowire MOSFETs , 2005, IEEE InternationalElectron Devices Meeting, 2005. IEDM Technical Digest..

[26]  Seiya Kasai,et al.  Observation of first and third harmonic responses in two-dimensional AlGaAs/GaAs HEMT devices due to plasma wave interaction , 2008 .

[27]  Mitsuru Takenaka,et al.  Ge/III-V Channel Engineering for Future CMOS , 2009 .

[28]  T.-J.K. Liu,et al.  Scale-Length Assessment of the Trigate Bulk MOSFET Design , 2009, IEEE Transactions on Electron Devices.

[29]  Roslan Hashim,et al.  Fabrication and characterization of planar dipole antenna integrated with gaas based-schottky diode for on-chip electronic device application , 2011 .

[30]  Kai Chang,et al.  A high conversion efficiency 5.8 GHz rectenna , 1997, 1997 IEEE MTT-S International Microwave Symposium Digest.

[31]  Eric Pop,et al.  ELECTRICAL TRANSPORT PROPERTIES AND FIELD EFFECT TRANSISTORS OF CARBON NANOTUBES , 2006 .

[32]  Hiroshi Iwai,et al.  CMOS technology-year 2010 and beyond , 1999, IEEE J. Solid State Circuits.

[33]  Abdul Manaf Hashim,et al.  RF–DC power conversion of Schottky diode fabricated on AlGaAs/GaAs heterostructure for on-chip rectenna device application in nanosystems , 2010 .

[34]  Hadis Morkoc,et al.  Properties of GaAs on Si grown by molecular beam epitaxy , 1990 .