Effects Of Hydrogen Annealing On Data Retention Time For High Density Drams

In this work the improvement of DRAM data retention time through the decrease of junction leakage currents using Hz-annealed wafers is reported for the first time. Wafers used in this work are conventional CZ and H,-annealed wafers, and they were processed together in high density DRAM fabrication for comparison. It has been shown that refresh time has been significantly improved for H2-annealed wafers. Parameters related to junction leakage have been measured and better junction quality has been achieved for H,-annealed wafers.