Experimental study of self‐heating in undoped polycrystalline silicon thin films

The rise in temperature due to Joule‐induced heating within undoped polycrystalline silicon resistors is estimated quantitatively when a moderately high electric field is applied. From the experimental results, a phenomenological expression of the rise in temperature in terms of the applied electric field, the geometrical dimensions of the resistor bar, and the resistivity of the polycrystalline silicon thin film is obtained.

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