论文信息 - 40 Gbit/s 1.55 [micro sign]m pin-HEMT photoreceiver monolithically integrated on 3 in GaAs substrate

40 Gbit/s 1.55 [micro sign]m pin-HEMT photoreceiver monolithically integrated on 3 in GaAs substrate

A 36.5 GHz bandwidth, 1.55 µm wavelength pin-HEMT photoreceiver with a distributed amplifier has been monolithically integrated on a 3 in GaAs substrate using a 0.15 µm gate-length pseudomorphic HEMT process. The pin photodiode has a responsivity of 0.34 A/W. Clearly-opened eye diagrams for a 40 Gbit/s optical data stream have been demonstrated.

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