Strategies to Control the Relaxation Kinetics of Ag‐Based Diffusive Memristors and Implications for Device Operation

Diffusive memristors based on volatile electrochemical metallization (v‐ECM) devices are of broad interest for applications in emerging memory technologies and neuromorphic computing areas due to their interesting features such as thresholding, self‐relaxation, and energy‐efficient switching behaviors. Recently, the nonlinear threshold kinetics and the correlation of filament formation and growth with its relaxation behavior are uncovered from a physical perspective. However, the complexity of the diffusive memristors’ behavior might still hamper a straight transfer into emerging computing applications. Facing this challenge means going beyond the single device level and understanding the impact of other circuitry elements for further optimization of device operation. In this work, the effect of a series resistor on the switching dynamics of Ag/HfO2/Pt diffusive memristor devices by deploying various programming schemes with different resistances is investigated. Furthermore, all results and their implications on devices’ operation are compressively discussed. These findings help to further advance the optimization of the operating condition of diffusive memristors.

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