论文信息 - CHARACTERISTICS OF A SIC MICROWAVE ABSORBER FOR A DAMPED CAVITY

CHARACTERISTICS OF A SIC MICROWAVE ABSORBER FOR A DAMPED CAVITY

Development of a SiC microwave absorber for a damped cavity is presented. The SiC studied has a resistivity of 101–102 Ω cm, which is the expected value to damp higher‐order modes (HOMs) in the cavity and also has high thermal conductivity. The absorber is attached to the cavity as a part of the beam duct. Since the SiC duct receives a large amount of energy from the electron (or positron) stored beam, it is very important to estimate the dissipation power in the SiC duct and to design a cooling mechanism. The heat load problem of the SiC duct is discussed and the results of high power testing of the SiC duct are presented. The damping mechanism for HOMs is based on the power dissipation due to the resistivity of SiC. The fine control of the resistivity of SiC in fabrication is very important. The preliminary results on this problem are also presented.

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