Trapped‐hole annealing and electron trapping in metal‐oxide‐semiconductor devices

Thermally stimulated current‐ and capacitance‐voltage techniques are combined to provide the first quantitative estimates of the contributions of trapped‐hole annealing and electron trapping to oxide‐trap charge neutralization in metal‐oxide‐semiconductor devices. For 350‐nm nonradiation‐hardened oxides, trapped electrons compensate ∼15% of the radiation‐induced trapped positive charge after x‐ray irradiation (evidently forming dipolar defects), and ∼65% of the trapped positive charge remaining after positive‐bias annealing at 80 °C. For 45‐nm radiation‐hardened oxides, trapped electrons compensate ∼45% of the trapped positive charge after irradiation, and ∼70% after annealing. Implications for models of oxide‐trap‐charge buildup and annealing are discussed.

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