Effects of impurity and composition profiles on electrical characteristics of GaAsSb/InGaAs hetero-junction vertical tunnel field effect transistors

We fabricated and characterized GaAs0.51Sb0.49/In0.53Ga0.47As hetero-junction vertical tunnel field effect transistors (TFETs) on InP substrates in order to examine the effects of the structural characteristics of GaAsSb/InGaAs hetero-structures on the electrical properties of the TFETs. The operation of the fabricated GaAs0.51Sb0.49/In0.53Ga0.47As TFET was confirmed with the ION/IOFF ratio of ∼102 over VG swing of 1.25 V at 297 K. This ION/IOFF ratio was improved up to ∼104 at 20 K, thanks to the suppression of the leakage current in the source junction. The secondary ion mass spectrometry analyses for the present hetero-structures have revealed that the concentration of the p-type dopant (Be) atoms, doped in the GaAsSb source regions, decreases in the InGaAs channel regions at an inverse slope of ∼11 nm/dec. Also, the scanning transmission electron microscope-energy dispersive X-ray spectroscopy has shown that group III and V compositions change abruptly in a region within 10 nm from the interface betwe...

[1]  A. Thean,et al.  Intrinsic Robustness of TFET Subthreshold Swing to Interface and Oxide Traps: A Comparative PBTI Study of InGaAs TFETs and MOSFETs , 2016, IEEE Electron Device Letters.

[2]  Jerry R. Meyer,et al.  Band parameters for III–V compound semiconductors and their alloys , 2001 .

[3]  Mitsuru Takenaka,et al.  Planar-type In0.53Ga0.47As channel band-to-band tunneling metal-oxide-semiconductor field-effect transistors , 2011 .

[4]  Mitsuru Takenaka,et al.  High Ion/Ioff and low subthreshold slope planar-type InGaAs tunnel field effect transistors with Zn-diffused source junctions , 2015 .

[5]  Tomonari Sato,et al.  Carbon reduction and antimony incorporation in InGaAsSb films grown by metalorganic molecular beam epitaxy using tris-dimethylaminoantimony , 2009 .

[6]  Adrian M. Ionescu,et al.  Tunnel field-effect transistors as energy-efficient electronic switches , 2011, Nature.

[7]  S. Mahapatra,et al.  Tunnel junction abruptness, source random dopant fluctuation and PBTI induced variability analysis of GaAs0.4Sb0.6/In0.65Ga0.35As heterojunction tunnel FETs , 2015, 2015 IEEE International Electron Devices Meeting (IEDM).

[8]  A. Ishitani,et al.  A study of the secondary‐ion yield change on the GaAs surface caused by the O+2 ion‐beam‐induced rippling , 1991 .

[9]  J. Fastenau,et al.  Demonstration of MOSFET-like on-current performance in arsenide/antimonide tunnel FETs with staggered hetero-junctions for 300mV logic applications , 2011, 2011 International Electron Devices Meeting.

[10]  Byung-Gook Park,et al.  Tunneling Field-Effect Transistors (TFETs) With Subthreshold Swing (SS) Less Than 60 mV/dec , 2007, IEEE Electron Device Letters.

[11]  G. Dewey,et al.  Fabrication, characterization, and physics of III–V heterojunction tunneling Field Effect Transistors (H-TFET) for steep sub-threshold swing , 2011, 2011 International Electron Devices Meeting.

[12]  D. Esseni,et al.  A review of selected topics in physics based modeling for tunnel field-effect transistors , 2017 .

[13]  A. Seabaugh,et al.  Tunnel Field-Effect Transistors: State-of-the-Art , 2014, IEEE Journal of the Electron Devices Society.

[14]  P. Chi,et al.  Secondary ion yield changes in Si and GaAs due to topography changes during O+2 or Cs+ ion bombardment , 1988 .

[15]  E. Memišević,et al.  Vertical InAs/GaAsSb/GaSb tunneling field-effect transistor on Si with S = 48 mV/decade and Ion = 10 μA/μm for Ioff = 1 nA/μm at Vds = 0.3 V , 2016, 2016 IEEE International Electron Devices Meeting (IEDM).

[16]  P. Hurley,et al.  Structural analysis, elemental profiling, and electrical characterization of HfO2 thin films deposited on In0.53Ga0.47As surfaces by atomic layer deposition , 2009 .

[17]  T. Mayer,et al.  Experimental demonstration of 100nm channel length In0.53Ga0.47As-based vertical inter-band tunnel field effect transistors (TFETs) for ultra low-power logic and SRAM applications , 2009, 2009 IEEE International Electron Devices Meeting (IEDM).

[18]  Qin Zhang,et al.  Low-Voltage Tunnel Transistors for Beyond CMOS Logic , 2010, Proceedings of the IEEE.

[19]  Tao Yu,et al.  Quantifying the impact of gate efficiency on switching steepness of quantum-well tunnel-FETs: Experiments, modeling, and design guidelines , 2015, 2015 IEEE International Electron Devices Meeting (IEDM).

[20]  Jack C. Lee,et al.  Improving the on-current of In0.7Ga0.3As tunneling field-effect-transistors by p++/n+ tunneling junction , 2011 .

[21]  M. Takenaka,et al.  Effects of buffered HF cleaning on metal–oxide–semiconductor interface properties of Al2O3/InAs/GaSb structures , 2015 .

[22]  Y. Taur,et al.  Examination of Two-Band $E(k)$ Relations for Band-to-Band Tunneling , 2016, IEEE Transactions on Electron Devices.