Investigation of multi-color, broadband quantum well infrared photodetectors with digital graded superlattice barrier and linear-graded barrier for long wavelength infrared applications
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Meimei Z. Tidrow | W. K. Liu | S. Li | M. Tidrow | Sheng S. Li | J.-H. Lee | J. Lee
[1] N. J. Sauer,et al. High quality In0.53Ga0.47As Schottky diode formed by graded superlattice of In0.53Ga0.47As/In0.52Al0.48As , 1989 .
[2] Shengshi Li,et al. A two-stack indirect-barrier/triple-coupled quantum well infrared detector for mid-wavelength and long-wavelength infrared dual band detection , 1997 .
[3] G. A. Vawter,et al. Optimization of blazed quantum-grid infrared photodetectors , 1999 .
[4] Paul R. Berger,et al. In/sub 0.53/Ga/sub 0.47/As MSM photodiodes with transparent CTO Schottky contacts and digital superlattice grading , 1997 .
[5] Kwong-Kit Choi,et al. Corrugated infrared hot-electron transistors , 1998 .
[6] Byoungho Lee,et al. Modeling of intersubband and free-carrier absorption coefficients in heavily doped conduction-band quantum-well structures , 1999 .
[7] Krishna Thyagarajan,et al. A novel numerical technique for solving the one-dimensional Schroedinger equation using matrix approach-application to quantum well structures , 1988 .
[8] S. S. Li,et al. Investigation of broad-band quantum-well infrared photodetectors for 8-14-/spl mu/m detection , 1999 .
[9] Hui C. Liu,et al. An asymmetric quantum well infrared photodetector with voltage‐tunable narrow and broad‐band response , 1996 .
[10] Sheng S. Li,et al. A voltage‐tunable multicolor triple‐coupled InGaAs/GaAs/AlGaAs quantum‐well infrared photodetector for 8–12 μm detection , 1996 .
[11] Chieh-Hsiung Kuan,et al. Design and characterization of superlattice infrared photodetector operating at low bias voltage , 2000 .
[12] M. Buchanan,et al. Intersubband infrared detector with optimized valence band quantum wells for 3–5 μm wavelength region , 1999 .
[13] C. Bethea,et al. Tunable long‐wavelength detectors using graded barrier quantum wells grown by electron beam source molecular beam epitaxy , 1990 .
[14] G. Bosman,et al. Noise characterization and device parameter extraction of a p‐type strained layer quantum‐well infrared photodetector , 1996 .
[15] C. Bethea,et al. Broadband 8–12 μm high‐sensitivity GaAs quantum well infrared photodetector , 1989 .
[16] Meimei Z. Tidrow,et al. Investigation of a multistack voltage-tunable four-color quantum-well infrared photodetector for mid- and long-wavelength infrared detection , 1999 .
[17] J. Gerard,et al. Effect of asymmetric barriers on performances of GaAs/AlGaAs quantum well detectors , 1995 .
[18] Ewa M. Goldys,et al. Intersubband optical absorption in strained double barrier quantum well infrared photodetectors , 1999 .
[19] M. Tidrow,et al. A three‐well quantum well infrared photodetector , 1996 .
[20] Sir B. Rafol,et al. Long-wavelength 256/spl times/256 GaAs/AlGaAs quantum well infrared photodetector (QWIP) palm-size camera , 2000 .
[21] B. F. Levine,et al. Quantum‐well infrared photodetectors , 1993 .
[22] Jason M. Mumolo,et al. 10–16 μm Broadband quantum well infrared photodetector , 1998 .
[23] Jason M. Mumolo,et al. 640/spl times/486 long-wavelength two-color GaAs/AlGaAs quantum well infrared photodetector (QWIP) focal plane array camera , 2000 .