Modeling and characterization of 80 V LDMOSFET for RF communications

This paper presents the design and optimization of a 80 V LDMOSFET used in RF power amplifiers for cellular base station applications. SRP data from an experimental device was used to prototype the device using advanced 2-D process and device simulators. DC and RF characterization has been performed for the device. A proper match has been obtained between the measured and simulated data. A simple circuit model has been developed in which each of the components has been associated with the physical principles of device operation. A close match between the measured and modeled RF data has been reported.