Graphene‐Contacted Ultrashort Channel Monolayer MoS2 Transistors
暂无分享,去创建一个
Guangyu Zhang | Hua Yu | Rong Yang | Jian Tang | Peng Chen | Jing Zhang | Guole Wang | Jing Zhao | Li Xie | Xiaobo Lu | Dongxia Shi | Hua Yu | J. Zhao | Rong Yang | Guibai Xie | D. Shi | Guangyu Zhang | Xiaobo Lu | Shuopei Wang | Guole Wang | Jing Zhang | Mengzhou Liao | Peng Chen | Mengzhou Liao | Shuopei Wang | Luojun Du | Guibai Xie | Jian Tang | Luojun Du | Li Xie
[1] Moon J. Kim,et al. MoS2 transistors with 1-nanometer gate lengths , 2016, Science.
[2] Yuchen Du,et al. MoS2 Field-Effec t Transistors With Graphene/ Metal Heterocontacts , 2014 .
[3] E. Vogel,et al. Field-effect transistors based on wafer-scale, highly uniform few-layer p-type WSe2. , 2016, Nanoscale.
[4] Zhixian Zhou,et al. Mobility improvement and temperature dependence in MoSe2 field-effect transistors on parylene-C substrate. , 2014, ACS nano.
[5] Jian-Bai Xia,et al. Photoresponsive and Gas Sensing Field-Effect Transistors based on Multilayer WS2 Nanoflakes , 2014, Scientific Reports.
[6] Dominique Baillargeat,et al. From Bulk to Monolayer MoS2: Evolution of Raman Scattering , 2012 .
[7] Dumitru Dumcenco,et al. Electrical transport properties of single-layer WS2. , 2014, ACS nano.
[8] A. Radenović,et al. Single-layer MoS2 transistors. , 2011, Nature nanotechnology.
[9] Zhixian Zhou,et al. High mobility WSe2 p- and n-type field-effect transistors contacted by highly doped graphene for low-resistance contacts. , 2014, Nano letters.
[10] Qiyuan He,et al. Pushing the Performance Limit of Sub-100 nm Molybdenum Disulfide Transistors. , 2016, Nano letters.
[11] Jing Guo,et al. On Monolayer ${\rm MoS}_{2}$ Field-Effect Transistors at the Scaling Limit , 2013, IEEE Transactions on Electron Devices.
[12] Kenji Watanabe,et al. Patterning monolayer graphene with zigzag edges on hexagonal boron nitride by anisotropic etching , 2016 .
[13] Lianmao Peng,et al. Scaling carbon nanotube complementary transistors to 5-nm gate lengths , 2017, Science.
[14] Mark S. Lundstrom,et al. Sub-10 nm carbon nanotube transistor , 2011, 2011 International Electron Devices Meeting.
[15] P. Packan,et al. Pushing the Limits , 1999, Science.
[16] M. Steigerwald,et al. Building high-throughput molecular junctions using indented graphene point contacts. , 2012, Angewandte Chemie.
[17] Madan Dubey,et al. Graphene/MoS2 hybrid technology for large-scale two-dimensional electronics. , 2014, Nano letters.
[18] Zhong Lin Wang,et al. Piezoelectricity of single-atomic-layer MoS2 for energy conversion and piezotronics , 2014, Nature.
[19] Likai Li,et al. Black phosphorus field-effect transistors. , 2014, Nature nanotechnology.
[20] Hao Wu,et al. Toward barrier free contact to molybdenum disulfide using graphene electrodes. , 2015, Nano letters.
[21] Michael S. Fuhrer,et al. Realization and electrical characterization of ultrathin crystals of layered transition-metal dichalcogenides , 2007 .
[22] Lei Wang,et al. Multi-terminal transport measurements of MoS2 using a van der Waals heterostructure device platform. , 2015, Nature nanotechnology.
[23] Jin-an Shi,et al. Precisely Aligned Monolayer MoS2 Epitaxially Grown on h-BN basal Plane. , 2017, Small.
[24] G. Steele,et al. Fast and broadband photoresponse of few-layer black phosphorus field-effect transistors. , 2014, Nano letters.
[25] Gyu-Tae Kim,et al. Few-layer black phosphorus field-effect transistors with reduced current fluctuation. , 2014, ACS nano.
[26] Hua Yu,et al. Patterned Peeling 2D MoS2 off the Substrate. , 2016, ACS applied materials & interfaces.
[27] D. Muller,et al. Large-scale chemical assembly of atomically thin transistors and circuits. , 2016, Nature nanotechnology.
[28] M. Ratner,et al. Covalently bonded single-molecule junctions with stable and reversible photoswitched conductivity , 2016, Science.
[29] P. Ye,et al. Channel length scaling of MoS2 MOSFETs. , 2012, ACS nano.
[30] Arindam Ghosh,et al. Graphene-MoS2 hybrid structures for multifunctional photoresponsive memory devices. , 2013, Nature nanotechnology.
[31] E. Wang,et al. An Anisotropic Etching Effect in the Graphene Basal Plane , 2010, Advanced materials.
[32] Hyunhyub Ko,et al. Ultrathin compound semiconductor on insulator layers for high-performance nanoscale transistors , 2010, Nature.
[33] Jing Kong,et al. MoS2 Field-Effect Transistor with Sub-10 nm Channel Length. , 2016, Nano letters.
[34] Hugen Yan,et al. Anomalous lattice vibrations of single- and few-layer MoS2. , 2010, ACS nano.
[35] E. Wang,et al. Patterning Graphene with Zigzag Edges by Self‐Aligned Anisotropic Etching , 2011, Advanced materials.
[36] J. Appenzeller,et al. High performance multilayer MoS2 transistors with scandium contacts. , 2013, Nano letters.
[37] Bin Liu,et al. Hysteresis in single-layer MoS2 field effect transistors. , 2012, ACS nano.
[38] Le Cai,et al. Ultrashort Channel Length Black Phosphorus Field-Effect Transistors. , 2015, ACS nano.
[39] Kai Yan,et al. High‐Performance Photoresponsive Organic Nanotransistors with Single‐Layer Graphenes as Two‐Dimensional Electrodes , 2009 .
[40] Peide D. Ye,et al. ${\rm MoS}_{2}$ Field-Effect Transistors With Graphene/Metal Heterocontacts , 2014, IEEE Electron Device Letters.
[41] Yan Xin,et al. Ambipolar molybdenum diselenide field-effect transistors: field-effect and Hall mobilities. , 2014, ACS nano.
[42] Chongwu Zhou,et al. High-performance chemical sensing using Schottky-contacted chemical vapor deposition grown monolayer MoS2 transistors. , 2014, ACS nano.