Complementary Resistive Switching in Flexible RRAM Devices

Complementary resistive switching (CRS) behavior in a flexible plastic substrate was studied for the first time in this letter. CRS behaviors in Al/Ni/NiAlOx/Al<sub>2</sub>O<sub>3-x</sub>/ITO device were demonstrated with excellent performance. A high-resistance ON/OFF ratio (~10<sup>3</sup>), 50-ms switch speed was successfully obtained. In addition, the mechanism of CRS behavior was interpreted by the redistribution of oxygen vacancies in NiAlO<sub>x</sub>/Al<sub>2</sub>O<sub>3-x</sub> stack layers. Such a CRS style flexible RRAM device is a possible solution for future integrated circuits application.

[1]  Hyunsang Hwang,et al.  Diode-less nano-scale ZrOx/HfOx RRAM device with excellent switching uniformity and reliability for high-density cross-point memory applications , 2010, 2010 International Electron Devices Meeting.

[2]  Rainer Waser,et al.  Complementary resistive switches for passive nanocrossbar memories. , 2010, Nature materials.

[3]  Seonghyun Kim,et al.  Operation Voltage Control in Complementary Resistive Switches Using Heterodevice , 2012, IEEE Electron Device Letters.

[4]  Z. R. Wang,et al.  A Self-Rectifying $\hbox{HfO}_{x}$ -Based Unipolar RRAM With NiSi Electrode , 2012, IEEE Electron Device Letters.

[5]  R. Waser,et al.  Integrated Complementary Resistive Switches for Passive High-Density Nanocrossbar Arrays , 2011, IEEE Electron Device Letters.

[6]  Hyunsang Hwang,et al.  Complementary Resistive Switching in Niobium Oxide-Based Resistive Memory Devices , 2013, IEEE Electron Device Letters.

[7]  Shimeng Yu,et al.  Resistive switching of carbon-based RRAM with CNT electrodes for ultra-dense memory , 2010, 2010 International Electron Devices Meeting.

[8]  Kinam Kim,et al.  A fast, high-endurance and scalable non-volatile memory device made from asymmetric Ta2O(5-x)/TaO(2-x) bilayer structures. , 2011, Nature materials.

[9]  Z. Wei,et al.  Demonstration of high-density ReRAM ensuring 10-year retention at 85°C based on a newly developed reliability model , 2011, 2011 International Electron Devices Meeting.

[10]  Said F. Al-Sarawi,et al.  An Analytical Approach for Memristive Nanoarchitectures , 2011, IEEE Transactions on Nanotechnology.

[11]  Yuchao Yang,et al.  Complementary resistive switching in tantalum oxide-based resistive memory devices , 2012, 1204.3515.