Resistive Bridge fault model evolution from conventional to ultra deep submicron

We present three resistive bridging fault models valid for different CMOS technologies. The models are partitioned into a general framework (which is shared by all three models) and a technology-specific part. The first model is based on Shockley equations and is valid for conventional but not deep submicron CMOS. The second model is obtained by fitting SPICE data. The third resistive bridging fault model uses Berkeley predictive technology model and BSIM4; it is valid for CMOS technologies with feature sizes of 90nm and below, accurately describing non-trivial electrical behavior in that technologies. Experimental results for ISCAS circuits show that the test patterns obtained for the Shockley model are still valid for the fitted model, but lead to coverage loss under the predictive model.

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