论文信息 - Effect of SiO2 incorporation on stability and work function of conducting MoO2

Effect of SiO2 incorporation on stability and work function of conducting MoO2

We show the incorporation of different amounts of SiO2 in conducting MoO2 results in materials that have large vacuum work functions tunable by approximately 1eV and improved thermal stability at elevated temperatures. Electrical measurements of MoSixOy∕HfO2∕SiOx∕n-Si capacitors show an approximate 5.1eV work function, suitable for p-channel metal-oxide-semiconductor devices. . Thickening of the interfacial SiOx layer was observed, however, after annealing the stack at higher temperatures in N2.

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