GaAs 8 GHz-band high power FET

A GaAs power FET exhibiting 0.7 W saturation output power and 45 % drain efficiency applying 6V at 8GHz, has been developed. An interdigitated source and drain electrode, and an overlaid gate electrode to connect in parallel 52 gates, are introduced to achieve 2 µm long and 2600µm wide Schottky gate FET.