论文信息 - Conduction‐band discontinuity in InGaP/GaAs measured using both current‐voltage and photoemission methods

Conduction‐band discontinuity in InGaP/GaAs measured using both current‐voltage and photoemission methods

Both current‐voltage and photoemission measurements of the conduction‐band discontinuity of the same InGaP/GaAs p‐n heterojunction have been carried out. Interpretation of the current‐voltage results using thermionic emission theory applied to a heterojunction bipolar transistor have resulted in a conduction‐band offset value of 0.21 eV in the case of a compositionally abrupt junction. This figure has been confirmed by performing independent photoemission measurements on the same junction.

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