Heavy Ion Microbeam Experimental Study of ASET on a Full-Custom CMOS OpAmp

An experimental evaluation of the sensitivity to Analog Single Events of a full-custom CMOS Operational Amplifier is reported. The output voltage waveform due to single ion impacts was studied, by scanning the entire area of the circuit under test, using the heavy ion microbeam facility at TANDAR laboratory. A two-dimensional map of the transients captured in the design was obtained, in which the grouping of events in the most sensitive transistors of the circuit can be seen, showing great agreement with results obtained by means of a SPICE simulation environment. Experimental validation of sensitivity provides a better insight into the true resilience against single events of a 180nm technology custom circuit, and shows that the microbeam facility is fit to perform integrated circuit irradiation to extract information down to the single transistor resolution.

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