Absolute measurement of transient carrier concentration and temperature gradients in power semiconductor devices by internal IR-laser deflection
暂无分享,去创建一个
G. Deboy | Wilfrid Claeys | Eckhard Wolfgang | E. Wolfgang | W. Claeys | G. Deboy | G. Sölkner | G. Sölkner
[1] V. Quintard,et al. Laser probing of thermal behaviour of electronic components and its application in quality and reliability testing , 1993 .
[2] Mario Bertolotti,et al. Temperature dependence of the refractive index in semiconductors , 1990 .
[3] R. M. Swanson,et al. The optical (free-carrier) absorption of a hole-electron plasma in silicon , 1980 .
[4] T. Geballe,et al. Seebeck Effect in Silicon , 1955 .
[5] R. Soref,et al. Electrooptical effects in silicon , 1987 .
[6] M. Soma,et al. Quantum calculations of the change of refractive index due to free carriers in silicon with nonparabolic band structure , 1990 .
[7] Gerald Earle Jellison,et al. The temperature dependence of the refractive index of silicon at elevated temperatures at several laser wavelengths , 1986 .