论文信息 - A low-drive-voltage, high-speed monolithic multiple-quantum-well modulator/DFB laser light source

A low-drive-voltage, high-speed monolithic multiple-quantum-well modulator/DFB laser light source

A high-speed InGaAs/InAlAs multiple-quantum-well (MQW) intensity modulator and an InGaAsP/InGaAs MQW distributed feedback laser were monolithically integrated by using a hybrid growth technique combining molecular beam epitaxy and metalorganic vapor phase epitaxy. An operating drive voltage of only 2.0 V, a 20-dB on/off ratio, and a 3-dB bandwidth greater than 15 GHz were obtained. This device operated stably in a single mode and with a side-mode suppression ratio of more than 50 dB.<<ETX>>

Y. Kondo | I. Kotaka | M. Okamoto | K. Wakita | H. Asai

[1] P. R. Berger,et al. 8-element linear array monolithic p-i-n MODFET photoreceivers using molecular beam epitaxial regrowth , 1993, IEEE Photonics Technology Letters.

[2] High-speed and low-drive-voltage monolithic multiple quantum-well modulator/DFB laser light source , 1992, IEEE Photonics Technology Letters.

[3] Hiroshi Ishikawa,et al. Frequency response of an optical intensity modulator monolithically integrated with a DFB laser , 1988 .

[4] Shigeyuki Akiba,et al. Monolithic integration of InGaAsP/InP distributed feedback laser and electroabsorption modulator by vapor phase epitaxy , 1987 .

[5] Kazuo Hagimoto,et al. Ultrahigh-speed driverless MQW intensity modulator, and 20 Gbit/s, 100 km transmission experiments , 1992 .

[6] Y. Yoshikuni,et al. Monolithic integration of a DFB laser and an MQW optical modulator in the 1.5 µm wavelength range , 1987 .