Growth of Ga$_{\bm 2}$O $_{\bm 3}$ Nanowires and the Fabrication of Solar-Blind Photodetector

The authors report the growth of nanowires by heating the GaN/sapphire template. It was found that density, average length, and average diameter of the nanowires all increased as we increased the grown temperature. It was also found that β-Ga<sub>2</sub>O <sub>3</sub> nanowires with good crystal quality could be achieved only at high temperatures (i.e., 1050 and 1100 °C). Solar-blind β-Ga<sub>2</sub>O <sub>3</sub> nanowire photodetector was also fabricated by depositing interdigitated contact electrodes. With an incident light wavelength of 255 nm and an applied bias of 5 V, it was found that measured responsivity of the photodetector was 3.72×10<sup>-1</sup> mA/W.

[1]  Takayoshi Oshima,et al.  Vertical Solar-Blind Deep-Ultraviolet Schottky Photodetectors Based on β-Ga2O3 Substrates , 2008 .

[2]  P. Chang,et al.  GaN-Based Schottky Barrier Photodetectors With a 12-Pair Mg$_{\rm x}$ N$_{\rm y}$ –GaN Buffer Layer , 2008, IEEE Journal of Quantum Electronics.

[3]  E. Muñoz,et al.  Photoconductive gain modelling of GaN photodetectors , 1998 .

[4]  R. Czernecki,et al.  Optimization of InGaN–GaN MQW Photodetector Structures for High-Responsivity Performance , 2009, IEEE Journal of Quantum Electronics.

[5]  Haibo Zeng,et al.  A Comprehensive Review of One-Dimensional Metal-Oxide Nanostructure Photodetectors , 2009, Sensors.

[6]  Yan-Kuin Su,et al.  InGaN-GaN multiquantum-well blue and green light-emitting diodes , 2002 .

[7]  Yoshihiro Kubota,et al.  Mn-Activated CaO–Ga2O3 Phosphors for Thin-Film Electroluminescent Devices , 1997 .

[8]  Hideo Hosono,et al.  Field-induced current modulation in epitaxial film of deep-ultraviolet transparent oxide semiconductor Ga2O3 , 2006 .

[9]  Craig A Grimes,et al.  Synthesis of gold-silica composite nanowires through solid-liquid-solid phase growth. , 2003, Journal of nanoscience and nanotechnology.

[10]  C. Soci,et al.  ZnO nanowire UV photodetectors with high internal gain. , 2007, Nano letters.

[11]  T. Wen,et al.  400-nm InGaN-GaN and InGaN-AlGaN multiquantum well light-emitting diodes , 2002 .

[12]  Kuei-Hsien Chen,et al.  High photocurrent gain in SnO2 nanowires , 2008 .

[13]  V. Valcárcel,et al.  Development of Single‐Crystal α‐Al2O3 Fibers by Vapor–Liquid–Solid Deposition (VLS) from Aluminum and Powdered Silica , 1998 .

[14]  Shinji Nakagomi,et al.  Enhancement of responsivity in solar-blind β-Ga2O3 photodiodes with a Au Schottky contact fabricated on single crystal substrates by annealing , 2009 .

[15]  Patrick L. Feng,et al.  Achieving fast oxygen response in individual β-Ga2O3 nanowires by ultraviolet illumination , 2006 .

[16]  Jih-Jen Wu,et al.  Low‐Temperature Growth of Well‐Aligned ZnO Nanorods by Chemical Vapor Deposition. , 2002 .

[17]  N. Grobert,et al.  Generation of hollow crystalline tungsten oxide fibres , 2000 .

[18]  Zhong Lin Wang,et al.  Nanobelts of Semiconducting Oxides , 2001, Science.

[19]  H. Meixner,et al.  Effect of the sensor structure on the stability of Ga2O3 sensors for reducing gases , 1994 .

[20]  Dapeng Yu,et al.  Nano-scale GeO2 wires synthesized by physical evaporation , 1999 .

[21]  J. Y. Zhang,et al.  Individual β-Ga2O3 nanowires as solar-blind photodetectors , 2006 .

[22]  Hideo Hosono,et al.  Synthesis and control of conductivity of ultraviolet transmitting β-Ga2O3 single crystals , 1997 .

[23]  H. Yumoto,et al.  Growth mechanism of vapor liquid solid (VLS) grown indium tin oxide (ITO) whiskers along the substrate , 1999 .

[24]  Takayoshi Oshima,et al.  Ga2O3 Thin Film Growth on c-Plane Sapphire Substrates by Molecular Beam Epitaxy for Deep-Ultraviolet Photodetectors , 2007 .

[25]  Oliver Ambacher,et al.  Thermal stability and desorption of Group III nitrides prepared by metal organic chemical vapor deposition , 1996 .

[26]  Zu Rong Dai,et al.  Novel Nanostructures of Functional Oxides Synthesized by Thermal Evaporation , 2003 .

[27]  M. M. Wong,et al.  Low-noise back-illuminated Al/sub x/Ga/sub 1-x/N-based p-i-n solar-blind ultraviolet photodetectors , 2001 .

[28]  Shinji Nakagomi,et al.  Sol-gel prepared β-Ga2O3 thin films for ultraviolet photodetectors , 2007 .