论文信息 - Low driving voltages and memory effect in organic thin-film transistors with a ferroelectric gate insulator

Low driving voltages and memory effect in organic thin-film transistors with a ferroelectric gate insulator

In this letter, two organic thin-film transistors with SiO2 and ferroelectric PbZrTiO3 (PZT) gate insulator are compared. The fabrication of the devices is described and their electrical properties estimated. The PZT-based devices show better performance: Low driving voltage, high Ion/Ioff ratio, etc. Moreover, a memory effect is reported in correlation with ferroelectric properties of PZT thin films.

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