Noise properties of linear defects in Hg1−xCdxTe

We study the influence of dislocations on noise properties of cadmium-mercury-telluride crystals. Crystals of n-type, as well as p-type, and composition x=0.2 or 0.23 were investigated. Noise in n+-p junctions produced by implantation of B+ ions was investigated in respect to dislocations and postimplanted crystal defects. Measurements of generation-recombination (GR) noise and noise of type fγ are reported for frequencies from 10 Hz to 1 MHz in the temperature range 70–300 K. It has been observed that defects generated by plastic deformation introduce a considerable increase of noise in p-type samples comparing to the samples of n-type. Studies point to a great decrease of noise, created by a defect arising during ion implantation, after annealing of n+-p functions.

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