Self-convergent scheme for logic-process-based multilevel/analog memory
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[1] Chenming Hu,et al. Hot-electron-induced photon and photocarrier generation in Silicon MOSFET's , 1984, IEEE Transactions on Electron Devices.
[2] C. Hu,et al. A simple method to characterize substrate current in MOSFET's , 1984, IEEE Electron Device Letters.
[3] Min-Hwa Chi,et al. A new self-convergent programming and erase tightening by substrate-hot-electron injection for ETOX cells in triple-well , 1999, 1999 International Symposium on VLSI Technology, Systems, and Applications. Proceedings of Technical Papers. (Cat. No.99TH8453).
[5] Masamitsu Oshikiri,et al. A self-convergence erasing scheme for a simple stacked gate flash EEPROM , 1991, International Electron Devices Meeting 1991 [Technical Digest].
[6] A. O. Adan,et al. A scaled 0.6 /spl mu/m high speed PLD technology using single-poly EEPROM's , 1995, Proceedings of the IEEE 1995 Custom Integrated Circuits Conference.
[8] S. M. Sze,et al. Physics of semiconductor devices , 1969 .
[9] Enhanced reliability in Si MOSFETs with channel lengths under 0.2 micron , 1990 .
[10] N. Asamoto,et al. A Planar Type Eeprom Cell Structure By Standard CMOS Process And Applications , 1993, Symposium 1993 on VLSI Technology.
[11] Ping Guo,et al. A programming method for multilevel analog flash memory using coarse and fine sequence , 2001, 2001 International Symposium on VLSI Technology, Systems, and Applications. Proceedings of Technical Papers (Cat. No.01TH8517).
[12] Guido Groeseneken,et al. Temperature dependence of the channel hot-carrier degradation of n-channel MOSFET's , 1990 .
[13] Tadashi Shibata,et al. A fast self-convergent flash-memory programming scheme for MV and analog data storage , 2001, ISCAS 2001. The 2001 IEEE International Symposium on Circuits and Systems (Cat. No.01CH37196).
[14] Tak H. Ning,et al. Emission probability of hot electrons from silicon into silicon dioxide , 1977 .
[15] B. Eitan,et al. Multilevel flash cells and their trade-offs , 1996, International Electron Devices Meeting. Technical Digest.
[16] T.Y. Chan,et al. Dependence of channel electric field on device scaling , 1985, IEEE Electron Device Letters.
[17] Ya-Chin King,et al. New single-poly EEPROM with cell size down to 8F/sup 2/ for high density embedded nonvolatile memory applications , 2003, 2003 Symposium on VLSI Technology. Digest of Technical Papers (IEEE Cat. No.03CH37407).
[18] C. Hu,et al. Lucky-electron model of channel hot-electron injection in MOSFET'S , 1984 .
[20] A. Bergemont,et al. A new single-poly flash memory cell with low-voltage and low-power operations for embedded applications , 1997, 1997 55th Annual Device Research Conference Digest.
[21] Reid R. Harrison,et al. A CMOS programmable analog memory-cell array using floating-gate circuits , 2001 .