The properties of the alloy semiconductor Hg 1-x Cd x Te and its application as an infrared detector material are reviewed. The selection of this alloy system as an infrared detector material is discussed. Bulk and epitaxial crystal growth techniques are described and representative electrical data presented which show the free carrier concentration to be in the 1014-1015cm-8range. The flexibility of this ternary system is then discussed relative to the compositional dependence of the energy gap. Photoconductive response data are presented for detectors having response peaks of 4-20 microns over the temperature range 15°-300°K. The expression E g = 1.6(x - 0.134) + 0.1335(0.435 - x)(T/100 -1) 40° < T < 240°K 0.15 < x < 0.35 is shown to represent the compositional and temperature dependence of the energy gap within the specified limits.
[1]
C. Verié,et al.
Masse effective des électrons dans le tellurure de mercure
,
1965
.
[2]
S. Porowski,et al.
Band Structure of HgTe
,
1965,
March 1.
[3]
E. H. Putley,et al.
Preparation and properties of HgTe and mixed crystals of HgTe-CdTe
,
1959
.
[4]
J. G. Mavroides,et al.
Band structure of HgTe and HgTe-CdTe alloys
,
1964
.
[5]
C. Mead,et al.
Conduction band minimum of CdTe
,
1964
.
[6]
H. Levinstein,et al.
Cooled photoconductive infrared detectors
,
1959
.