论文信息 - Advanced germanium channel transistors (invited)

Advanced germanium channel transistors (invited)

High performance Ge channel MOSFETs with inversion and junctionless operation modes are demonstrated. The Ge epi layer on SOI is used as substrate to meet the need of cost reduction and mass production. The gate-all-around structure formed by selective anisotropic etching provides good channel controllability and the defect at Ge/Si interface is removed. The high drive current of 828 μA/μm for nFETs and 390 μA/μm for pFETs are achieved with low leakage current and good subthreshold characteristics.

S.-H. Hsu | C.-H. Huang | Chee Wee Liu | S.-H. Huang | I.-H. Wong

[1] Matthew J. Rosseinsky,et al. Physical Review B , 2011 .

[2] Технология. International Electron Devices Meeting , 2010 .

[3] Yasuhiko Ishikawa,et al. Deformation potential constants of biaxially tensile stressed Ge epitaxial films on Si ( 100 ) , 2004 .

[4] Selective dry-etching process for fabricating Ge gate-all-around field-effect transistors on Si substrates , 2013 .

[5] Chi-Woo Lee,et al. Junctionless multigate field-effect transistor , 2009 .

[6] M. Armstrong,et al. Comparison of Junctionless and Conventional Trigate Transistors With $L_{g}$ Down to 26 nm , 2011, IEEE Electron Device Letters.

[7] Chao-Hsin Chien,et al. Germanium N and P Multifin Field-Effect Transistors With High-Performance Germanium (Ge) ${\rm p}^{+}/{\rm n}$ and ${\rm n}^{+}/{\rm p}$ Heterojunctions Formed on Si Substrate , 2013, IEEE Transactions on Electron Devices.