Influence of rapid thermal annealing parameters on properties of YBaCuO thin films sputtered on silicon-based substrates

In order to optimize the performances of YBaCuO thin films, elaborated by a two step process on Si02/Si3N4/Si substrates, we have studied the effect of rapid thermal annealing (FI'A) conditions on low temperature (i.e. < 200°C) sputtered layers, in the thickness range 0.3 - 1.5 gin. Both the superconduc- ting properties and the surface quality of the layers have been investigated. One of the advantages of this process is to allow the use of a very thin nitride layer (i.e. 45 A), to avoid the harmful diffusion of silicon from the wafer. This fast technique is also efficient to prevent interdiffusion between the silica and YBaCuO layers. Our first results show that an onset temperaure in the 87-91K range can been obtained, with 60 K and 'c 500 AOlfl (at T(R..0)/2). It is also shown that these figures might be improved by repeated RTA cycles.

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