Charge-state dependence of InAs quantum-dot emission energies

[1]  Karl Hess,et al.  Electric field enhanced emission from non‐Coulombic traps in semiconductors , 1981 .

[2]  S. Makram-Ebeid,et al.  Quantum model for phonon-assisted tunnel ionization of deep levels in a semiconductor , 1982 .

[3]  D. Bimberg,et al.  Capacitance–voltage characteristics of InAs/GaAs quantum dots embedded in a pn structure , 2000 .

[4]  Hansen,et al.  Spectroscopy of quantum levels in charge-tunable InGaAs quantum dots. , 1994, Physical review letters.

[5]  J. L. Hartke.  The Three‐Dimensional Poole‐Frenkel Effect , 1968 .

[6]  L. Samuelson,et al.  Deep level transient spectroscopy of InP quantum dots , 1995 .

[7]  D. K. Schwartz,et al.  Dynamic scaling of the submonolayer island size distribution during self-assembled monolayer growth , 1999 .

[8]  L. Samuelson,et al.  ELECTRICAL CHARACTERIZATION OF INP/GAINP QUANTUM DOTS BY SPACE CHARGE SPECTROSCOPY , 1998 .

[9]  Axel Lorke,et al.  Few-electron ground states of charge-tunable self-assembled quantum dots , 1997 .

[10]  Costas Fotakis,et al.  LASERS, OPTICS, AND OPTOELECTRONICS 2865 Single-mode solid-state single photon source based on isolated quantum dots in pillar microcavities , 2001 .

[11]  D. Lang.  Deep‐level transient spectroscopy: A new method to characterize traps in semiconductors , 1974 .

[12]  D. Bimberg,et al.  Electronic and optical properties of strained quantum dots modeled by 8-band k⋅p theory , 1999 .

[13]  S. Makram-Ebeid,et al.  Electric-Field-Induced Phonon-Assisted Tunnel Ionization from Deep Levels in Semiconductors , 1982 .

[14]  D. Bimberg,et al.  InAs/GaAs pyramidal quantum dots: Strain distribution, optical phonons, and electronic structure. , 1995, Physical review. B, Condensed matter.

[15]  G. Medeiros-Ribeiro,et al.  Coulomb interactions in small charge-tunable quantum dots: A simple model , 1998 .

[16]  Yozo Shimada,et al.  Bound-to-continuum intersubband photoconductivity of self-assembled InAs quantum dots in modulation-doped heterostructures , 1999 .

[17]  G. Vincent,et al.  Electric field effect on the thermal emission of traps in semiconductor junctions , 1979 .

[18]  J. Chyi,et al.  Charging of embedded InAs self-assembled quantum dots by space-charge techniques , 2001 .

[19]  A. Zunger,et al.  Theoretical interpretation of the experimental electronic structure of lens shaped, self-assembled InAs/GaAs quantum dots , 2000, cond-mat/0003055.

[20]  O. Tretyak,et al.  Deep level transient spectroscopy characterization of InAs self-assembled quantum dots , 2001 .

[21]  Yu. G. Musikhin,et al.  Electronic structure of self-assembled InAs quantum dots in GaAs matrix , 1998 .

[22]  G. Medeiros-Ribeiro,et al.  Charging dynamics of InAs self-assembled quantum dots , 1997 .

[23]  D. Chuu,et al.  HIGH-PRESSURE PHASE TRANSITIONS IN ZN1-XMXSE (M=CD, FE, AND MN) , 1998 .

[24]  C. Pryor.  Eight-band calculations of strained InAs/GaAs quantum dots compared with one-, four-, and six-band approximations , 1997, cond-mat/9710304.

[25]  Wen-Hao Chang,et al.  Hole emission processes in InAs/GaAs self-assembled quantum dots , 2002 .

[26]  A. R. Kovsh,et al.  Hole and electron emission from InAs quantum dots , 2000 .

[27]  Xun Wang,et al.  COULOMB CHARGING EFFECT IN SELF-ASSEMBLED GE QUANTUM DOTS STUDIED BY ADMITTANCE SPECTROSCOPY , 1998 .