Ultrafast Operation of Vth-Adjusted P+ -n+ Double-Gate SOI MOSFET's
暂无分享,去创建一个
[1] Y. Tosaka,et al. Analytical surface potential expression for thin-film double-gate SOI MOSFETs , 1994 .
[2] J. Colinge,et al. Silicon-on-insulator 'gate-all-around device' , 1990, International Technical Digest on Electron Devices.
[3] T. Sekigawa,et al. Calculated threshold-voltage characteristics of an XMOS transistor having an additional bottom gate , 1984 .
[4] M. V. Fischetti,et al. Monte Carlo simulation of a 30 nm dual-gate MOSFET: how short can Si go? , 1992, 1992 International Technical Digest on Electron Devices Meeting.
[5] R. Pierret,et al. Dual-gate operation and volume inversion in n-channel SOI MOSFET's , 1992, IEEE Electron Device Letters.
[6] T. Yamazaki,et al. 21 psec switching 0.1 /spl mu/m-CMOS at room temperature using high performance Co salicide process , 1993, Proceedings of IEEE International Electron Devices Meeting.