The devices were simulated using the Atlas 3D software. Both JNTs and pi-gate MuGFETs have a gate length of 25nm and an EOT of 1nm. In all devices the gate material workfunction is chosen such that the off drain current at VD=1V and VG=0V is equal to 100 nA/um. A pitch equal to 2×WSi is considered for all devices. Thus if WSi=10nm, the off current in an individual nanowire is equal to 100nA/um×20nm=2nA. The current drive of JNTs is similar to that of the IM MuGFET. It is quite dependent on the underlap with highdoping (10cm) S&D regions (Fig 1). In lightly-doped JNTs (10cm) an accumulation layer may be formed at VD=1V. In JNTs with higher doping concentrations, the current is purely a bulk current (Fig. 2).