600V trench-gate IGBT with Micro-P structure
暂无分享,去创建一个
Y. Onozawa | T. Yamazaki | Y. Seki | H. Nakano | R. Kawano
[1] Y. Onozawa. Development of the next generation 1200V trench-gate FS-IGBT featuring lower EMI noise and lower switching loss , 2007, Proceedings of the 19th International Symposium on Power Semiconductor Devices and IC's.
[2] Masahito Otsuki,et al. Analysis on the low current turn-on behavior of IGBT module , 2000, 12th International Symposium on Power Semiconductor Devices & ICs. Proceedings (Cat. No.00CH37094).
[3] T. Laska,et al. The Field Stop IGBT (FS IGBT). A new power device concept with a great improvement potential , 2000, 12th International Symposium on Power Semiconductor Devices & ICs. Proceedings (Cat. No.00CH37094).