论文信息 - Design and characterization of FET based cold/hot noise sources

Design and characterization of FET based cold/hot noise sources

Innovative design, modeling, and characterization methods are described for FET cold noise sources. A developed InP HEMT cold/hot noise source demonstrates 105 K in the 18-22 GHz range; the highest reported frequency for a FET cold noise source. Measurements confirm variable source temperature from 105 K to over 1000 K.

[1] L. Dunleavy,et al. A table based bias and temperature dependent small signal and noise equivalent circuit model , 1995, Proceedings of 1995 IEEE MTT-S International Microwave Symposium.

[2] R. L. Forward,et al. Electronically Cold Microwave Artificial Resistors , 1983 .

[3] R. Frater,et al. An Active "Cold" Noise Source , 1981 .

[4] G. F. Engen,et al. Application of Radiometry to the accurate measurement of amplifier noise , 1991 .