Crystal host engineering for transition metal lasers
暂无分享,去创建一个
Jonathan W. Evans | Patrick A. Berry | Kenneth L. Schepler | Sean A. McDaniel | Thomas R. Harris | Ronald W. Stites | Gary Cook | Thomas R. Harris | G. Cook | K. Schepler | S. McDaniel | P. Berry | R. Stites
[1] Valentin Gapontsev,et al. Frontiers of Mid-IR Lasers Based on Transition Metal Doped Chalcogenides , 2018, IEEE Journal of Selected Topics in Quantum Electronics.
[2] Patrick A. Berry,et al. Gain-switched operation of ultrafast laser inscribed waveguides in Cr:ZnSe , 2015, Photonics West - Lasers and Applications in Science and Engineering.
[3] Seunghoon Nam,et al. Optical and electronic properties of post-annealed ZnO:Al thin films , 2010 .
[4] Sean A. McDaniel,et al. Hot isostatic pressing of transition metal ions into chalcogenide laser host crystals , 2016 .
[5] Erik Ostermann,et al. Optical Spectroscopy Of Inorganic Solids , 2016 .
[6] B. Rami Reddy,et al. Optical spectroscopy and modeling of Fe 2+ ions in zinc selenide , 2017 .
[7] Jonathan W. Evans,et al. Increasing the performance of an Fe:ZnSe laser using a hot isostatic press , 2017 .
[8] Li Yan,et al. Passive mode locking of inhomogeneously broadened lasers , 2007 .
[9] M. Emam-Ismail,et al. Microstructure and optical studies of electron beam evaporated ZnSe1−xTex nanocrystalline thin films , 2012 .
[10] S. Mirov,et al. 1.5-mJ Cr:ZnSe Chirped Pulse Amplifier Seeded by a Kerr-Lens Mode-Locked Cr:ZnS oscillator , 2019, Laser Congress 2019 (ASSL, LAC, LS&C).
[11] N. Saito,et al. Self-starting mode-locked Cr:ZnS laser using single-walled carbon nanotubes with resonant absorption at 2.4 μm. , 2019, Optics letters.
[12] Valentin Gapontsev,et al. Middle-IR frequency comb based on Cr:ZnS laser. , 2019, Optics express.
[13] M. Emam-Ismail,et al. Composition, annealing and thickness dependence of structural and optical studies on Zn1−xMnxS nanocrystalline semiconductor thin films , 2012 .
[14] B. G. Bravy,et al. Gigawatt mid-IR (4-5 μm) femtosecond hybrid Fe2+:ZnSe laser system , 2017, Optics + Optoelectronics.
[15] M. Doroshenko,et al. Fe2+:Cd1-xMnxTe (x = 0.1–0.76) Laser Generating at 5.5–6 μm at Room Temperature , 2019, 2019 Conference on Lasers and Electro-Optics Europe & European Quantum Electronics Conference (CLEO/Europe-EQEC).
[16] C. Thomsen,et al. Phonons in bulk CdSe and CdSe nanowires , 2009, Nanotechnology.
[17] Vladimir V. Fedorov,et al. Temperature and concentration quenching of mid-IR photoluminescence in iron doped ZnSe and ZnS laser crystals , 2012 .
[18] F. Krausz,et al. Passive mode locking of homogeneously and inhomogeneously broadened lasers. , 1992, Optics letters.
[19] H.-J. Schulz,et al. Cr2+ excitation levels in ZnSe and ZnS , 1976 .
[20] V. Kozlovsky,et al. 2 mJ room temperature Fe:CdTe laser tunable from 5.1 to 6.3 μm. , 2019, Optics letters.
[21] Jonathan W. Evans,et al. A Passively $Q$-Switched, CW-Pumped Fe:ZnSe Laser , 2014, IEEE Journal of Quantum Electronics.
[22] N. Minaev,et al. 3.5-mJ 150-fs Fe:ZnSe hybrid mid-IR femtosecond laser at 4.4 μm for driving extreme nonlinear optics. , 2019, Optics letters.
[23] B. Hennion,et al. Normal modes of vibrations in ZnSe , 1971 .
[24] G. L. Pearson,et al. Crystal-field spectra of 3d super n impurities in II-VI and III-V compound semiconductors. , 1967 .
[25] Jonathan W. Evans,et al. 840 mW continuous-wave Fe:ZnSe laser operating at 4140 nm. , 2012, Optics letters.
[26] Ramdas,et al. Electronic excitations of substitutional transition-metal ions in II-VI semiconductors: CdTe:Fe2+ and CdSe:Fe2+ , 1992, Physical review. B, Condensed matter.
[27] Jonathan W. Evans,et al. Demonstration and power scaling of an Fe:CdMnTe laser at 52 microns , 2017 .
[28] Jonathan W. Evans,et al. Double-pass Co:CdTe mid-infrared laser amplifier , 2018, Optical Materials Express.
[29] T. Edvinsson,et al. Investigation of Vibrational Modes and Phonon Density of States in ZnO Quantum Dots , 2012 .
[30] Petr Koranda,et al. Tunable mid-infrared laser properties of Cr2+:ZnMgSe and Fe2+:ZnSe crystals , 2009 .
[31] J. Camacho,et al. Lattice Dynamics in Wurtzite Semiconductors: The Bond Charge Model of CdS , 1999 .
[32] H. Sowa. The high-pressure behaviour of CdSe up to 3 GPa and the orientation relations between its wurtzite- and NaCl-type modifications , 2005 .
[33] Jonathan W. Evans,et al. Re-absorption and nonradiative energy transfer in vibronic laser gain media , 2018, LASE.
[34] P. S. Pizani,et al. Influence of minor oxidation of the precursor powders to form nanocrystalline CdTe by mechanical alloying , 2008 .
[35] S. K. Tripathi,et al. Effect of deposition pressure on structural, optical and electrical properties of zinc selenide thin films , 2011 .