Crystallization behavior of Dy 3+-doped selenide glasses

Abstract Rare earth (RE)-doped chalcogenide glasses are an important promising material for active photonic devices, including mid-infrared (mid-IR) fiber lasers and amplifiers. Here we report on dysprosium ion (Dy 3+ )-doped GeAsGaSe chalcogenide glasses based on 10 atomic (at.) % Ga. A series of Dy 3+ -doped GeAsGaSe glasses, with increasing levels of Dy 3+ dopant from 0 ppm to 2000 ppm added to the Ge 16.5 As 9 Ga 10 Se 64.5 (at. %) base glass, is synthesized and characterized using: Fourier transform infrared spectrometry; X-ray diffraction (XRD); imaging and analysis using a high resolution transmission electron microscope, with selected area electron diffraction (HRTEM-SAED), and energy dispersive X-ray spectroscopy (HRTEM-EDX) and an environmental scanning electron microscope with energy dispersive X-ray spectroscopy (ESEM-EDX) and with secondary electron mapping. At the higher levels of Dy 3+ doping, the glasses exhibit bulk crystallization; XRD, HRTEM-EDX and ESEM-EDX indicate the crystals are predominantly a modified, face centered cubic α-Ga 2 Se 3 , with some substitution of Ge. In addition, features on the bulk glass surface are shown to comprise Dy 3+ , sometimes accompanied by Si and [O] which, it is suggested, are due to contamination from the silica glass melting ampoule.

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