论文信息 - Wear-out, breakdown occurrence and failure detection in 18-25 Å ultrathin oxides

Wear-out, breakdown occurrence and failure detection in 18-25 Å ultrathin oxides

Abstract In this paper, a comprehensive description of the ultrathin oxide failure evolution is presented. For sub-25 A, Hard BD is no longer hard. A complete description of the novel failure manifestation (progressive breakdown) is done. Associated wear-out is modelled and a physical mechanism is proposed. Finally, the relevance of the failure definition is discussed. It is a crucial point, to adopt a rigorous methodology for reliability prediction. It is concluded that, in the case of progressive breakdown, noise occurrence must be considered as the relevant time to failure.

G. Pananakakis | Gérard Ghibaudo | Frederic Monsieur | E. Vincent

[1] R. Degraeve,et al. Analysis of high voltage TDDB measurements on Ta/sub 2/O/sub 5//SiO/sub 2/ stack , 1999, International Electron Devices Meeting 1999. Technical Digest (Cat. No.99CH36318).

[2] Jordi Suñé,et al. Detection and fitting of the soft breakdown failure mode in MOS structures , 1999 .

[3] Kenji Okada,et al. New Experimental Findings on Stress Induced Leakage Current of Ultra Thin Silicon Dioxides , 1994 .

[4] Guido Groeseneken,et al. On the properties of the gate and substrate current after soft breakdown in ultrathin oxide layers , 1998 .

[5] Bin Wang,et al. Temperature dependence of soft breakdown and wear-out in sub-3 nm SiO/sub 2/ films , 2000, 2000 IEEE International Reliability Physics Symposium Proceedings. 38th Annual (Cat. No.00CH37059).

[6] Guido Groeseneken,et al. A consistent model for the thickness dependence of intrinsic breakdown in ultra-thin oxides , 1995, Proceedings of International Electron Devices Meeting.

[7] Roberto Saletti,et al. Current fluctuations and silicon oxide wear-out in metal-oxide-semiconductor tunnel diodes , 1988 .