A 400μW, 4.7–6.4GHz VCO under an above-IC inductor in 45nm CMOS

A 4.7-to-6.4 GHz VCO is designed in 45 nm bulk CMOS using an above-IC inductor on top of the active circuitry, yielding 28% area reduction. The inductor is shielded from the circuitry, using the top metal layers of the CMOS back- end, which enables the proposed 3D integration for low-cost performance extension. The fully integrated VCO consumes just 400 muW, achieves a FoM of 185 dB, and occupies and area of only 0.12 mm2.

[1]  F. Zhang,et al.  Design of Components and Circuits Underneath Integrated Inductors , 2006, IEEE Journal of Solid-State Circuits.

[2]  E. Beyne,et al.  Wafer-level packaging technology for high-Q on-chip inductors and transmission lines , 2004, IEEE Transactions on Microwave Theory and Techniques.

[3]  P. Soussan,et al.  High-$Q$ Above-IC Inductors Using Thin-Film Wafer-Level Packaging Technology Demonstrated on 90-nm RF-CMOS 5-GHz VCO and 24-GHz LNA , 2006, IEEE Transactions on Advanced Packaging.

[4]  Steven Brebels,et al.  Wafer-level package interconnect options , 2006, IEEE Transactions on Very Large Scale Integration (VLSI) Systems.

[5]  H. Jacobsson,et al.  Low Phase Noise sub-1 V Supply 12 and 18 GHz VCOs in 90 nm CMOS , 2006, 2006 IEEE MTT-S International Microwave Symposium Digest.

[6]  Y. Papananos,et al.  RF operation of MOSFETs under integrated inductors , 2006, IEEE Transactions on Microwave Theory and Techniques.

[7]  H. Jacobsson,et al.  A 15 GHz and a 20 GHz low noise amplifier in 90 nm RF-CMOS , 2006, Digest of Papers. 2006 Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems.

[8]  P. Wambacq,et al.  Low-power voltage-controlled oscillators in 90-nm CMOS using high-quality thin-film postprocessed inductors , 2005, IEEE Journal of Solid-State Circuits.

[9]  Mingquan Bao,et al.  A 9–31-GHz Subharmonic Passive Mixer in 90-nm CMOS Technology , 2006 .

[10]  W. De Raedt,et al.  Experimental analysis of above-IC inductor performance with different patterned ground shield configurations and dummy metals , 2006, 2006 European Microwave Conference.

[11]  G. Carchon,et al.  Implementation of 6kV ESD Protection for a 17GHz LNA in 130nm SiGeC BiCMOS , 2006, 2006 IEEE International Conference on Semiconductor Electronics.

[12]  E. Beyne,et al.  Thin-film as enabling passive integration technology for RF SoC and SiP , 2005, ISSCC. 2005 IEEE International Digest of Technical Papers. Solid-State Circuits Conference, 2005..

[13]  P. Soussan,et al.  Class 3 HBM and class M4 MM ESD protected 5.5 GHz LNA in 90 nm RFCMOS using above-IC inductor , 2005, 2005 Electrical Overstress/Electrostatic Discharge Symposium.