InGaAs/GaAs Quantum-Dot Superluminescent Diode for Optical Sensor and Imaging
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Hery Susanto Djie | W.H. Chang | J.C.M. Hwang | C. Dimas | B. Ooi | J.C.M. Hwang | Dong-Ning Wang | Boon-Siew Ooi | G. Dang | Dong-ning Wang | W. Chang | C.E. Dimas | G.T. Dang | H. Djie
[1] T. E. Lamas,et al. Large self-assembled InAs/GaAs quantum dots with an optical emission above 1.3 μm , 2004 .
[2] G. Park,et al. Temperature dependence of lasing characteristics for long-wavelength (1.3-μm) GaAs-based quantum-dot lasers , 1999, IEEE Photonics Technology Letters.
[3] D. Ackley,et al. A strained-layer InGaAs-GaAs-AlGaAs single quantum well broad spectrum LED by selective-area metalorganic chemical vapor deposition , 1994, IEEE Photonics Technology Letters.
[4] Brett E. Bouma,et al. Optical Coherence Tomography , 2013 .
[5] Dennis G. Deppe,et al. 1.3 μm InAs quantum dot laser with To=161 K from 0 to 80 °C , 2002 .
[6] N. Yokoyama,et al. 1.3-μm CW lasing of InGaAs-GaAs quantum dots at room temperature with a threshold current of 8 mA , 1999, IEEE Photonics Technology Letters.
[7] K.-Y. Liou,et al. Operation of an LED with a single-mode semiconductor amplifier as a broad-band 1.3-μm transmitter source , 1995, IEEE Photonics Technology Letters.
[8] John H. Marsh,et al. Selective quantum-well intermixing in GaAs-AlGaAs structures using impurity-free vacancy diffusion , 1997 .
[9] M. Hopkinson,et al. Broad-Band Superluminescent Light Emitting Diodes Incorporating Quantum Dots in Compositionally Modulated Quantum Wells , 2005, IEEE Photonics Technology Letters.
[10] M. Davies,et al. The fabrication of a broad-spectrum light-emitting diode using high-energy ion implantation , 1996, IEEE Photonics Technology Letters.
[11] D. Deppe,et al. 1.3 μm room-temperature GaAs-based quantum-dot laser , 1998 .
[12] Z.G. Wang,et al. High-performance quantum-dot superluminescent diodes , 2004, IEEE Photonics Technology Letters.
[13] G. Ripandelli,et al. Optical coherence tomography. , 1998, Seminars in ophthalmology.
[14] H. S. Djie,et al. Electronics states of interdiffused quantum dots , 2005 .
[15] Ching-Fuh Lin,et al. Extremely broadband AlGaAs/GaAs superluminescent diodes , 1997 .
[16] Kristian M. Groom,et al. Improved performance of 1.3μm multilayer InAs quantum-dot lasers using a high-growth-temperature GaAs spacer layer , 2004 .
[17] A. Fiore,et al. Quantum dot superluminescent diodes emitting at 1.3 /spl mu/m , 2005, IEEE Photonics Technology Letters.
[18] Andrea Fiore,et al. Impact of intraband relaxation on the performance of a quantum-dot laser , 2003 .
[19] M. S. Skolnick,et al. Growth, Fabrication, and Operating Characteristics of Ultra-Low Threshold Current Density 1.3 µm Quantum Dot Lasers , 2005 .
[20] H. Okamoto,et al. A narrow beam 1.3-/spl mu/m-super luminescent diode integrated with a spot-size converter and a new type rear absorbing region , 1998 .
[21] Boon S. Ooi,et al. Group-III vacancy induced In{sub x}Ga{sub 1-x}As quantum dot interdiffusion , 2006 .
[22] B.S. Ooi,et al. Semiconductor quantum-dot based wideband emitter for optical sensors , 2005, IEEE Sensors, 2005..
[23] J. Fujimoto,et al. In vivo ultrahigh-resolution optical coherence tomography. , 1999, Optics letters.
[24] J. Fujimoto,et al. In vivo endoscopic optical biopsy with optical coherence tomography. , 1997, Science.
[25] M. Brezinski. Optical Coherence Tomography: Principles and Applications , 2006 .
[26] Il Ki Han,et al. High power broadband InGaAs/GaAs quantum dot superluminescent diodes , 2003 .
[27] C. Dimas,et al. Wideband quantum-dash-in-well superluminescent diode at 1.6 /spl mu/m , 2006, IEEE Photonics Technology Letters.
[28] Chin-Lin Chen,et al. Fiber-optic gyroscopes with broad-band sources , 1983 .
[29] M. Sugawara,et al. Self-Formed In0.5Ga0.5As Quantum Dots on GaAs Substrates Emitting at 1.3 µm , 1994 .
[30] Lorenzo Occhi,et al. Wide emission spectrum from superluminescent diodes with chirped quantum dot multilayers , 2005 .
[31] P. Bhattacharya,et al. Structural and luminescence characteristics of cycled submonolayer InAs/GaAs quantum dots with room-temperature emission at 1.3 μm , 1999 .
[32] James C. M. Hwang,et al. Group-III vacancy induced InxGa1-xAs quantum dot interdiffusion , 2006 .