Fabrication of GaAs quantum wires (∼10 nm) by metalorganic chemical vapor selective deposition growth

GaAs triangular‐shaped quantum wires with the lateral width of ∼10 nm are fabricated by metalorganic chemical vapor selective deposition growth technique. The lateral dimension is determined by both photoluminescence (PL) measurement and a high‐resolution scanning electron micrograph observation. A systematic change in the size of the quantum wire exhibits consistent blue shifts of the PL peak keeping high intensities, which demonstrates enhanced two‐dimensional quantum confinement with the material of high quality.