Prediction of NBTI stress and recovery time kinetics in Si capped SiGe p-MOSFETs

NBTI stress and recovery temporal kinetics at different experimental conditions are predicted in Si and SiGe (having Si cap) p-MOSFETs. Mutually uncorrelated contributions from interface (ΔV<inf>IT</inf>) and bulk (ΔV<inf>OT</inf>) trap generation and hole trapping ΔV<inf>HT</inf>) in pre-existing bulk traps are used to calculate overall threshold voltage shift (ΔV<inf>T</inf>). Impact of process variations such as Si cap and quantum well (QW) thickness and Ge% in QW on stress-recovery kinetics and voltage acceleration factor (VAF) is modeled using a consistent set of model parameters.

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