Strong Interfacial Exchange Field in the Graphene/eus Heterostructure Exploiting 2d Materials for Spintronic Applications Can Potentially Realize Next-generation Devices Featuring Low Power Consumption and Quantum Operation Capability . the Magnetic Exchange Field (mef) Induced by an Adjacent Magnet
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J. Moodera | Sunwoo Lee | W. Cha | F. Katmis | J. Hone | Peng Wei | Florian Lemaitre | Lucas Pinel | Davide Cutaia | Yu Zhu | D. Heiman | Ching-Tzu Chen